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Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM

Published on 29 March 2018
Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM
Description
 
Date 
Authors
Alayan M., Vianello E., De Salvo B., Perniola L., Padovani A., Larcher L.
Year2017-0265
Source-TitleIEEE Design and Test
Affiliations
Advanced Memory Technology Laboratory, CEA-LETI, Grenoble, France, Università di Modena e Reggio Emilia, Italy
Abstract
Editor's note: Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors investigate the forming voltage and the data retention of aluminum (Al)-doped HfO2-based RRAM devices and suggest a way to improve the device's data retention time. - - Yiran Chen, Duke University © 2013 IEEE.
Author-Keywords
Al-doping, data retention, forming, RRAM
Index-Keywords
Forming, Hafnium oxides, Random access storage, RRAM, Al-doping, Data retention, Data retention time, Duke University, Emerging memory, Forming voltages, Retention time, Time duration, Aluminum
ISSN21682356
LinkLink

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