Research Fields and Interests

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From 2006 to 2009, Gregory Di Pendina focused on new hybrid process development. His interests were mainly (i) MEMS integration on integrated circuit, enabling to combine both mechanical and electrical processing on a single ASIC chip ; (ii) Photovoltaic integration at circuit environment level (board, package) or at silicon integrated circuit level (PV layers deposited on top on the last metal layer. Organic PV integration).

From 2009, Gregory Di Pendina interests moved to hybrid non-volatile ASIC design and test integrating Magnetic Tunnel Junctions, basic element of MRAMs. He has also been involved in several Process Design Kit (PDK) development enabling complete non-volatile ASIC design, fabrication, test and characterization.

 

Field of expertize: MRAM technologies

• FIMS: Field Induced Magnetic Switching



• TAS: Thermally Assisted Switching



• STT: Spin Transfer Torque



• SOT: Spin Orbit Torque

 

Field of interest and ongoing projects:

• Ultra-low power design for Internet of Things (IoT) purposes



• Asynchronous design techniques



• Radiation hardening using MRAM devices



• MRAM-based security primitive design and sensor design
               


• Microelectronics processes
• 350 nm CMOS
• 180 nm CMOS
• 130 nm CMOS
• 40 nm CMOS
• 28 nm CMOS FD-SOI
In FDSOI transistors the electrical conduction channel that forms between source and drain is confined to the ultra-thin silicon layer under the gate oxide and above the SOI buried oxide. Source: ST-Ericsson.


• Other non-volatile technologies
• RedOx RAM
• PCRAM

 

Former field of interest:

• Photovoltaic technologies
• Thin-film PIN / NIP, single / double stack
• Organic (OPV)



• MEMS: Micro Electro Mechanical Systems
• Bulk micromachining

• MUMPS