Current Release 104.0 CURRENT RELEASEThe Current Release will remain fixed until a proposed candidate release is accepted for release as a CMC standard by the Compact Council:http://www.si2.org/cmc/_____________________________________________________________________________________________
Archive: PSP_103.4.0
Version 103.8.2
Release notes vA-code of PSP 104.0.0 (September 2023)
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Changes include:
- New DIBL model based on a quasi-Fermi level correction including screening
effect in inversion regime.
- Addition of new parameters to improve gm description in saturation regime:
THESATT (local model), THESATTO (global model), POTHESATT (binning model).
- Bug-fix on the Cgb-Cbg reciprocity in strong inversion regime when the bias-
dependence of interface states model is activated with high value of CTG/CTB
parameters.
- New calculation of the drain saturation voltage to improve the drain saturation
current of long channel transistors.
- Improvement of S/D symmetry for low value of AX parameter thanks to the
introduction of a new mathematical function of linear-saturation transition.
- Bug-fix on the source and drain access resistances should be independent to the
number of fingers NF.
- Removal of the effective doping bias-dependence effect in the surface potential
equation and its associated parameters VNSUB. VNSUBO. POVNSUB. NSLP, NSLPO,
PONSLP, DNSUB, DNSUBO and PODNSUB.
- New binning equations with "hybrid" approach to mix physical scaling rules with
binning rules.
- Revisited DC operating point output variables with 2 new switches to configure
the conventions: pmos convention with SWOPPMOS and drain configuration with
SWOPDRAIN. The effects of access gate, drain and source resistances can be
included in the calculation of several OP-output quantities using SWOPREXT.
PSP 104.0.0 is not backward compatible with the previous versions.