Researchers at IRIG have used Ta/CoFeB/MgO thin-film stacks possessing a two-dimensional electron gas, which offer key advantages for integration into spintronic technologies. The conductivity of the electron gas can be modulated using an electric field applied across the SrTiO3 substrate, with two switchable and remanent high- and low-resistivity states of the device. The resistance contrast is over 1000%. Researchers then measured the spin-orbit torques acting on magnetization in the Hall cross, and found that the effects on magnetization are different for the high- and low-resistivity states.
This non-volatile electrical control has the potential to create a new generation of devices for memory and logic applications, and for artificial intelligence.
Scanning microscopy image : Hall cross nanostructure used for measurements. Branch widths range from 200 nm to 2 µm
Fundings: ANR Contrabass, Institut Universitaire de France, ERC Fresco, European projects FET-OPEN Tocha and ITN Spear, and Upstream Technological Platform PTA.