​L-UTSOI model:

L-UTSOI compact model is dedicated to FDSOI technologies, and is the new name of Leti-UTSOI, a high maturity model in development since 2007 and used in industrial environments for nearly 8 years. It continues to benefit from experience accumulated over several industrial technology generations, as well as from more than 25 years of CEA-Leti expertise on FDSOI technology.  The L-UTSOI model is able to physically describe FDSOI transistor behavior for any bias configuration, including the case of strong forward back bias where two channels take place at the front and back interfaces of a thin silicon body.  Such capability relies on innovative solutions for surface potential analytical calculations and for describing current and charge models.

L-UTSOI is developped by CEA-LETI.