To lower the energy consumption of microelectronic devices and keep on increasing our computing capacities, alternatives to the CMOS transistor and the von Neumann architecture are required. In-memory computing using non-volatile devices is a promising direction but current technologies face fundamental issues. Ferroelectricity, the order parameter that uses stable and non-volatile electrical polarization, is highlighted as the most power-efficient order mechanism to write the information. However, the efficiency of current ferroelectric devices remains limited and new unconventional readout mechanisms are required. This thesis revolves around three different reading mechanisms of the ferroelectric state in the ferroelectric Rashba semiconductor GeTe: the ferroelectric Schottky diode, the ferroelectric control of the spin-to-charge conversion, and the ferroelectric nonlinear anomalous Hall effect.

Plus d'information :https://www.spintec.fr/phd-defense-unconventional-readings-of-the-ferroelectric-state-in-the-rashba-semiconductor-gete/
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Pour suivre la soutenance ​​​en visioconférence : https://univ-grenoble-alpes-fr.zoom.us/j/3241920232

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