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Highlight | Nanomaterials
Motivated by the emergence of new opto-electronics devices such as single-photon emitters, electron microscopes equipped with effusion cells have been developed in order to monitor in situ the molecular beam epitaxy of complex semiconductor nanostructures. Researchers at IRIG present the results on the growth of II-VI nanowires obtained on the Nanomax setup in Palaiseau, France.
The development of semiconductor nanostructures has been achieved through a good control of their fabrication, for instance by Molecular Beam Epitaxy (MBE). For a long time, this technique has been limited to the growth of planar structures such as quantum wells, inducing a spatial confinement of charge carriers in the perpendicular direction. New challenges, such as the realization of single-photon emitters for quantum communications, require a stronger confinement in two or three directions, obtained by making nanowires and quantum dots.
Figure: (a) ZnTe nanowires grown in MBE cluster; (b) Nanomax image showing the gold seed at the top of the ZnTe nanowire, with a two-monolayer step at the interface; the step (indicated by the arrow) propagates from right to left; (c) idem, with a one-monolayer step. The schemes in-between display the Au atomic planes (in yellow) and the ZnTe planes (in green) for the two configurations.
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