a reconfigurable soi cmos doherty power amplifier module for broadband lte high-power user equipment applications
| Description | |
| Date | 2020 |
| Date | |
| Auteurs | Serhan,- A | Parat,- D | Reynier,- P | Pezzin,- M | Mourot,- R | Chaix,- F | Berro,- R | Indirayanti,- P | De ranter,- C | Han,- K | Borremans,- M | Mercier,- E | Giry,- A | |
| Source | 2013 IEEE Radio Frequency Integrated Circuits Symposium,- RFIC 2013 | |
| Résumé | A reconfigurable broadband Doherty PA module for LTE HPUE (High Power User Equipment) applications is presented,- which is the first to be based on an SOI-CMOS PA without predistortion and supply modulation. The PA die (1.3×1.7mm2) is fabricated in a 130nm SOI-CMOS process and assembled,- using flip-chip,- on a 3.2×3.7mm2 laminate package. From 1.9GHz to 2.7GHz,- the PA provides 28dBm of output power (Pout) under 3.4V supply voltage (Vdd),- with a PAE higher than 35% and an E-UTRA ACLR lower than-35dBc when using a 10MHz-50RB QPSK LTE uplink signal,- without predistortion. At 2.3GHz,- the proposed PA achieves 43.5% of PAE and-39.6dBc of ACLR at 28dBm of Pout. When operating at Vdd=5V (HPUE mode),- the PA reaches a saturated power of 4W with a maximum PAE of 57% and delivers a Pout of 31dBm with 42.6% of PAE and-35.7dBc of ACLR using a 20MHz-100RB QPSK LTE signal. © 2020 IEEE. |
| DOI | http://dx.doi.org/10.1109/RFIC49505.2020.9218305 |
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