surge current capability in lateral algan/gan hybrid anode diodes with p-gan/schottky anode
| Description | |
| Date | 2020 |
| Date | |
| Auteurs | Atmaca,- G | Jaud,- M-a | Jerome,- Jb | Biscarrat,- J | Gwoziecki,- R | Plissonnier,- M | Poiroux,- T | Yvon,- A | Collard,- E | |
| Source | 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials,- AM-FPD 2014 | |
| Résumé | In lateral power diodes,- the conductivity modulation mechanism can pave the way to the demonstration of surge current capability. In a Hybrid Anode Diode concept with a p-GaN layer,- an anode contact on p-GaN layer can be a source of hole injection that increases the electron density at AlGaN/GaN interface. The role of p-GaN layer on the surge current capability and its demonstration are investigated through TCAD simulations that explain the role of hole barrier tunneling at anode metal/p-GaN interface. These simulations show that surge current can occur in case of Ohmic p-GaN contact as the injected holes can lead to create additional electron density in the channel as well as a hole current to support the total diode current. © 2020 The Japan Society of Applied Physics. |
| DOI | http://dx.doi.org/10.23919/SISPAD49475.2020.9241673 |
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