evaluation of iii-v/si multi-junction solar cells potential for space
| Description | |
| Date | 2018 |
| Date | |
| Auteurs | Cariou,- R | Medjoubi,- K | Vauche,- L | Veinberg-vidal,- E | Park,- S | Lefèvre,- J | Baudrit,- M | Voarino,- P | Mur,- P | Boizot,- B | |
| Source | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 (pp 3335-3338) |
| Résumé | Hybrid III-V/Si multi-junction solar cells, which combine efficient III-V top cells with a silicon bottom cell, the most wide-spread photovoltaic material, offer great opportunities. Recent advances in this field have shown that mechanically stacked or wafer bonded III-V/Si can reach similar AM1.5g efficiencies than the standard GaInP/GaAs/Ge space triplejunction solar cells. In this study, we review the potential of this new hybrid III-V/Si cell technology for space applications. The first experimental results of wafer bonded 2-terminal GaInP/GaAs/Si solar cell electron irradiation will be presented. The BOL and EOL (1 MeV electrons) performances will be characterized under AM0 spectrum, and the radiation tolerance will be compared with single-junction silicon and standard Ge based triple-junction. © 2018 IEEE. |
| DOI | http://dx.doi.org/10.1109/PVSC.2018.8547773 |
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