quantum dot-based frequency multiplier
| Description | |
| Date | 2023 |
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| Auteurs | Oakes,- G.A | Peri,- L | Cochrane,- L | Martins,- F | Hutin,- L | Bertrand,- B | Vinet,- M | Gomez,- Saiz,- A | Ford,- C.J.B | Smith,- C.G | Gonzalez-Zalba,- M.F. | |
| Source | |
| Résumé | Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radio-frequency multiplier operated at cryogenic temperatures. The device is based on the nonlinear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multigate silicon-nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of the energy detuning, the multiplication factor, and the harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors. © 2023 authors. Published by the American Physical Society. |
| DOI | 10.1103/PRXQuantum.4.020346 |
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