Electronic structure and electron mobility in Si1- xGex nanowires
| Auteurs | Mugny G., Li J., Triozon F., Niquet Y.-M., Rideau D., Delerue C. |
| Year | 2017-0118 |
| Source-Title | Applied Physics Letters |
| Affiliations | STMicroelectronics, 850 rue J. Monnet, Crolles, France, CEA, LETI, Minatec Campus and Université Grenoble Alpes, Grenoble, France, Université Grenoble Alpes, Institut NÉEL, CNRS, Grenoble, France, CEA, INAC-MEM, L_Sim and Université Grenoble Alpes, Grenoble, France, Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN, Lille, France |
| Abstract | We investigate the electronic structure and the electron mobility in Si1- xGex nanowires for relevant orientations ( ? 001 ? , ? 110 ?, and ? 111 ?) and diameters up to 8 nm based on atomistic models. The calculation of the electronic structure with random distribution of alloy atoms is compared to the virtual crystal approximation. The electronic properties such as the effective mass and the character of the lowest conduction subband are linked with the strong variations of the phonon-limited electron mobility with varying Ge concentrations. The effect of alloy disorder on the mobility is also discussed. © 2017 Author(s). |
| Author-Keywords | |
| Index-Keywords | Crystal structure, Electron mobility, Electronic properties, Electronic structure, Germanium, Nanowires, Alloy disorder, Atomistic models, Effective mass, Ge concentrations, Random distribution, Subbands, Virtual crystal approximation, Crystal atomic structure |
| ISSN | 36951 |
| Lien vers article | Link |