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Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration

Publié le 29 mars 2018
Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration
Auteurs
Fenouillet-Beranger C., Acosta-Alba P., Mathieu B., Kerdilès S., Samson M.-P., Previtali B., Rambal N., Lapras V., Ibars F., Roman A., Kachtouli R., Besson P., Nieto J.-P., Pasini L., Brunet L., Aussenac F., Hartmann J.-M., Mazzamuto F., Toqué-Trésonne I., Huet K., Batude P., Vinet M.
Year2017-0093
Source-Title2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
Affiliations
CEA, Leti, MINATEC Campus, France, STMicroelectronics, France, SCREEN-LASSE, France
Abstract
In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated for a 28nm node backend metal 1 design rules technology both from morphological and electrical perspectives. This study highlights the interest of ns laser anneal for CoolCube™ 3D integration. © 2016 IEEE.
Author-Keywords
3D, CoolCube, intermediary BEOL, Laser anneal, monolithic integration
Index-Keywords
Annealing, Chemical activation, Integrated circuit interconnects, Microelectronics, Thermodynamic stability, 3-D integration, CoolCube, Energy process, intermediary BEOL, Laser anneal, Laser annealing, Laser energy density, Monolithic integration, Integration
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