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Leakage current conduction in metal gate junctionless nanowire transistors

Publié le 29 mars 2018
Leakage current conduction in metal gate junctionless nanowire transistors
Auteurs
Oproglidis T.A., Karatsori T.A., Barraud S., Ghibaudo G., Dimitriadis C.A.
Year2017-0222
Source-TitleSolid-State Electronics
Affiliations
Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece, IMEP-LAHC, INPG – Minatec, 3 Parvis Louis Néel, Grenoble, France, CEA-LETI Minatec, 17 rue des Martyrs, Grenoble, France
Abstract
In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region. © 2017
Author-Keywords
Fowler-Nordheim tunneling, Junctionless, Nanowire transistor, Off-state leakage current
Index-Keywords
Drain current, Electric currents, Field emission, Gate dielectrics, Nanowires, Current conduction, Drain leakage current, Gate-leakage current, Junctionless, N-channel devices, Nanowire transistors, Off-state leakage current, Polysilicon gates, Leakage currents
ISSN381101
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