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Quantitative Analysis of la and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack

Publié le 29 mars 2018
Quantitative Analysis of la and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack
Auteurs
Suarez-Segovia C., Leroux C., Domengie F., Ghibaudo G.
Year2017-0169
Source-TitleIEEE Electron Device Letters
Affiliations
STMicroelectronics, Crolles, France, CEA, LETI, MINATEC Campus, Grenoble, France, IMEP-LAHC, MINATEC Campus, Grenoble, France
Abstract
Voltage drop induced by an electrical dipole layer after the incorporation of La or Al in high-k/metal gate-stack has been measured on nominal and beveled-SiOx devices and linearly correlated to the effective La/Al dose into the high-k/SiOx stack determined through X-ray fluorescence spectroscopy. Electrical dipoles were experimentally estimated to be around -55 and +40 meV for each 1× 1014 at/cm2 of effective La and Al dose, respectively. © 1980-2012 IEEE.
Author-Keywords
aluminum, capacitance measurement, diffusion processes, lanthanum alloys, Work function, X-ray spectroscopy
Index-Keywords
Capacitance, Capacitance measurement, Fluorescence spectroscopy, Lanthanum alloys, Logic gates, Work function, X ray spectroscopy, Diffusion process, Electrical dipoles, High- k, High-k/metal gates, Voltage drop, X ray fluorescence spectroscopy, Aluminum
ISSN7413106
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