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Pauli spin blockade in CMOS double quantum dot devices

Publié le 29 mars 2018
Pauli spin blockade in CMOS double quantum dot devices
Kotekar-Patil D., Corna A., Maurand R., Crippa A., Orlov A., Barraud S., Hutin L., Vinet M., Jehl X., De Franceschi S., Sanquer M.
Source-TitlePhysica Status Solidi (B) Basic Research
Université Grenoble Alpes, INAC-PHELIQS, Grenoble, France, INAC-PHELIQS, CEA Grenoble, Grenoble, France, Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, United States, Université Grenoble Alpes, Grenoble, France, LETI MINATEC campus, CEA Grenoble, Grenoble, France
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here, we report on transport experiments in double gate nanowire transistors issued from a complementary metal–oxide–semiconductor (CMOS) process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet–triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6T. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
magneto-transport measurements, Pauli spin blockade, quantum dots, silicon, transistors
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