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Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Publié le 29 mars 2018
Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain
Auteurs
Barraud S., Lapras V., Samson M.P., Gaben L., Grenouillet L., Maffini-Alvaro V., Morand Y., Daranlot J., Rambal N., Previtalli B., Reboh S., Tabone C., Coquand R., Augendre E., Rozeau O., Hartmann J.M., Vizioz C., Arvet C., Pimenta-Barros P., Posseme N., Loup V., Comboroure C., Euvrard C., Balan V., Tinti I., Audoit G., Bernier N., Cooper D., Saghi Z., Allain F., Toffoli A., Faynot O., Vinet M.
Year2017-0130
Source-TitleTechnical Digest - International Electron Devices Meeting, IEDM
Affiliations
CEA, LETI, MINATEC Campus and Univ., Grenoble Alpes, Grenoble, France, STMicroelectronics, 850 rue J. Monnet, Crolles, France
Abstract
"We report on vertically stacked horizontal Si NanoWires (NW) /""-MOSFETs fabricated with a replacement metal gate (RMG) process. For the first time, stacked-NWs transistors are integrated with inner spacers and SiGe source-drain (S/D) stressors. Recessed and epitaxially re-grown SiGe(B) S/D junctions are shown to be efficient to inject strain into Si/-channels. The Precession Electron Diffraction (PED) technique, with a nm-scale precision, is used to quantify the deformation and provide useful information about strain fields at different stages of the fabrication process. Finally, a significant compressive strain and excellent short-channel characteristics are demonstrated in stacked-NWs /-FETs. © 2016 IEEE."
Author-Keywords
 
Index-Keywords
Electron devices, Nanowires, Silicon alloys, Compressive strain, Different stages, Fabrication process, Precession electron diffractions, Short channels, SiGe source/drain, Source-drain, Strain fields, MOSFET devices
ISSN1631918
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