Data retention extraction methodology for perpendicular STT-MRAM
| Auteurs | Tillie L., Nowak E., Sousa R.C., Cyrille M.-C., Delaet B., Magis T., Persico A., Langer J., Ocker B., Prejbeanu I.-L., Perniola L. |
| Year | 2017-0124 |
| Source-Title | Technical Digest - International Electron Devices Meeting, IEDM |
| Affiliations | CEA-LETI, Minatec Campus, Grenoble, France, SPINTEC, Univ., Grenoble Alpes, CEA, CNRS, Grenoble, France, Singulus Technologies AG, Kahl Am Main, Germany |
| Abstract | While perpendicular STT-MRAM are seen as a promising next-generation memory, retention becomes critical and must be characterized precisely. Four extraction methods are explained taking special emphasize on accuracy and precision. They are then applied from single cell to kb-array, from 50 to 250 nm diameter cells and up to 235°C in order to show the limitations and advantages of each method. © 2016 IEEE. |
| Author-Keywords | |
| Index-Keywords | Electron devices, Extraction, Magnetic recording, Accuracy and precision, Data retention, Extraction method, Single cells, STT-MRAM, MRAM devices |
| ISSN | 1631918 |
| Lien vers article | Link |