Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
| Auteurs | Nail C., Molas G., Blaise P., Piccolboni G., Sklenard B., Cagli C., Bernard M., Roule A., Azzaz M., Vianello E., Carabasse C., Berthier R., Cooper D., Pelissier C., Magis T., Ghibaudo G., Vallee C., Bedeau D., Mosendz O., De Salvo B., Perniola L. |
| Year | 2017-0121 |
| Source-Title | Technical Digest - International Electron Devices Meeting, IEDM |
| Affiliations | CEA, LETI, MINATEC Campus, Grenoble, France, IMEP LAHC CNRS, Grenoble, France, LTM CNRS, Grenoble, France, WD San Jose Research Center, United States |
| Abstract | In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 1010 cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features. We then propose an analytical model to calculate the dependence between endurance, window margin and retention, linking material parameters to memory characteristics. © 2016 IEEE. |
| Author-Keywords | |
| Index-Keywords | Economic and social effects, Electron devices, Random access storage, Conducting filament, First principle calculations, Material parameter, Trade off, RRAM |
| ISSN | 1631918 |
| Lien vers article | Link |