Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
| Auteurs | Baines Y., Buckley J., Biscarrat J., Garnier G., Charles M., Vandendaele W., Gillot C., Plissonnier M. |
| Year | 2017-0496 |
| Source-Title | Scientific Reports |
| Affiliations | Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France |
| Abstract | Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher. © 2017 The Author(s). |
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| ISSN | 20452322 |
| Lien vers article | Link |