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Frequency shift keying by current modulation in a MTJ-based STNO with high data rate

Publié le 29 mars 2018
Frequency shift keying by current modulation in a MTJ-based STNO with high data rate
Auteurs
Ruiz-Calaforra A., Purbawati A., Brächer T., Hem J., Murapaka C., Jiménez E., Mauri D., Zeltser A., Katine J.A., Cyrille M.-C., Buda-Prejbeanu L.D., Ebels U.
Year2017-0413
Source-TitleApplied Physics Letters
Affiliations
Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, Grenoble, France, Western Digital, 5600 Great Oaks Parkway, San Jose, CA, United States, Univ. Grenoble Alpes, Grenoble, France, CEA-LETI MINATEC-Campus, 17 rue des Martyrs, Grenoble, France
Abstract
Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable candidates for applications in wireless communications, where cost-effective and complementary metal-oxide semiconductor-compatible standalone devices are required. In this work, we study the ability of a magnetic-tunnel-junction based spin torque nano-oscillator to respond to a binary input sequence encoded in a square-shaped current pulse for its application as a frequency-shift-keying (FSK) based emitter. We demonstrate that below the limit imposed by the spin torque nano-oscillator intrinsic relaxation frequency, an agile variation between discrete oscillator states is possible. For this kind of devices, we demonstrate FSK up to data rates of 400 Mbps, which is well suited for the application of such oscillators in wireless networks. © 2017 Author(s).
Author-Keywords
 
Index-Keywords
CMOS integrated circuits, Cost effectiveness, Frequency agility, Frequency shift keying, Magnetic devices, Metals, Modulation, MOS devices, Oxide semiconductors, Semiconductor devices, Tunnel junctions, Wireless telecommunication systems, Amplitude and frequency modulations, Complementary metal-oxide-semiconductor compatible, Frequency shift keying(FSK), Frequency tuning range, Magnetic tunnel junction, Relaxation frequency, Shaped current pulse, Wireless communications, Microwave oscillators
ISSN36951
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