Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?
| Auteurs | Chelnokov A., Pauc N., Gassenq A., Aubin J., Thai Q.M., Milord L., Bertrand M., Guilloy K., Rothman J., Zabel T., Sigg H., Hartmann J.M., Calvo V., Reboud V. |
| Year | 2017-0409 |
| Source-Title | Summer Topicals Meeting Series, SUM 2017 |
| Affiliations | Univ. Grenoble Alpes, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, France, Univ. Grenoble Alpes, CEA-INAC, 17 rue des Martyrs, Grenoble, France, Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, Villigen, Switzerland |
| Abstract | For the near-infrared (near-IR) optical data communications, silicon photonics became a mature technology. Building on the technological developments associated with datacoms, silicon photonics now expands into the mid-infrared (mid-IR), mostly for the optical gas sensing. Here as well, the development is hampered by the absence of monolithically integrated laser sources compatible with the CMOS fab processing. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Germanium, Infrared devices, Photonic devices, Si-Ge alloys, Tin alloys, Mid infrared (mid IR), Monolithically integrated, Near Infrared, Optical data, Optical gas sensing, Si photonics, Silicon photonics, Technological development, Photonics |
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