Total Ionizing Dose Response of Multiple-Gate Nanowire Field Effect Transistors
| Auteurs | Gaillardin M., Marcandella C., Martinez M., Duhamel O., Lagutere T., Paillet P., Raine M., Richard N., Andrieu F., Barraud S., Vinet M. |
| Year | 2017-0393 |
| Source-Title | IEEE Transactions on Nuclear Science |
| Affiliations | CEA, DAM, DIF, Arpajon, France, CEA, LETI-Minatec, Grenoble, France |
| Abstract | "This paper investigates the total ionizing dose (TID) response of nanoscaled field-effect transistors (FET) made of silicon multiple-gate nanowire (NW). The NWFET architecture relies on its remarkable electrostatic properties to push ""silicon""-based technologies much deeper into device scaling than present FinFETs. However, as commonly observed when a new device or technology concept is proposed, such as shallow trench isolation and silicon-on-insulator or FinFET, TID effects reveal unexpected behaviors that can permanently modify pristine device electrical characteristics. This is why this paper discusses the impact of several parameters including the NWFET design and the transistor's type to get thorough insights into the NWFET TID behavior. © 2017 IEEE." |
| Author-Keywords | 3-D IC, 3-D stack, 3-D technology, bulk silicon, CMOS, FinFET, multiple-gate, nanoelectronic, nanowire (NW), semiconductor, silicon-on-insulator (SOI), technology, total ionizing dose (TID), triple-gate, ultrathin SOI (UTSOI) |
| Index-Keywords | CMOS integrated circuits, FinFET, Flash memory, Ionizing radiation, Nanoelectronics, Nanowires, Semiconducting silicon, Semiconductor materials, Silicon, Silicon on insulator technology, Technology, Three dimensional integrated circuits, Transistors, 3-D stack, Bulk silicon, Multiple gates, Silicon-on- insulators (SOI), Total Ionizing Dose, Triple-gate, Ultra-thin, Field effect transistors |
| ISSN | 189499 |
| Lien vers article | Link |