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Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

Publié le 29 mars 2018
Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector
Auteurs
Urdampilleta M., Hutin L., Jadot B., Bertrand B., Bohuslavskyi H., Maurand R., Barraud S., Bauerle C., Sanquer M., Jehl X., De Franceschi S., Meunier T., Vinet M.
Year2017-0372
Source-TitleDigest of Technical Papers - Symposium on VLSI Technology
Affiliations
Institut Néel, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble, France, CEA, INAC-PHELIQS, Grenoble, France
Abstract
We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option. © 2017 JSAP.
Author-Keywords
 
Index-Keywords
Quantum computers, Quantum optics, Quantum theory, Semiconductor quantum dots, Silicon, VLSI circuits, Charge detectors, Fault-tolerant quantum computing, MOS technology, Quantum Computing, Real time monitoring, Single spin, Single-shot readout, Split gates, Semiconducting silicon
ISSN7431562
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