Output matching network design for broadband class B/J power amplifier
| Auteurs | Boutayeb S., Giry A., Serhan A., Arnould J.-D., Lauga-Larroze E. |
| Year | 2017-0346 |
| Source-Title | PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings |
| Affiliations | CEA, LETI, Minatec Campus, Grenoble, France, Université de Grenoble-Alpes, CNRS, IMEP-LAHC, Grenoble, France |
| Abstract | This paper presents a design approach for the output matching networks (OMN) required in continuous class B/J power amplifiers (PA). Design equations of the OMN are derived and used to design a class-B/J PA that covers the frequency band from 2.2 GHz to 3.45 GHz. The PA uses the LDMOS device available in the 130 nm SOI technology from STMicroelectronics. Simulation results show that the PA has an efficiency higher than 60 % while delivering an output power higher than 23 dBm across the targeted frequency band. The maximum simulated efficiency is 69% for an output power of 24.1 dBm at 3 GHz. © 2017 IEEE. |
| Author-Keywords | class B/J, continuous-mode, LDMOS, Output matching network, power amplifier, SOI, wideband |
| Index-Keywords | Broadband amplifiers, Efficiency, Frequency bands, Microelectronics, MOS devices, Class B, Continuous mode, LDMOS, Output matching network, Wide-band, Power amplifiers |
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