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Novel C-V measurements based method for the extraction of GaN buffer layer residual doping level in HEMT

Publié le 29 mars 2018
Novel C-V measurements based method for the extraction of GaN buffer layer residual doping level in HEMT
Auteurs
Nifa I., Leroux C., Torres A., Charles M., Reimbold G., Ghibaudo G., Bano E.
Year2017-0291
Source-TitleIEEE International Conference on Microelectronic Test Structures
Affiliations
CEA-LETI, MINATEC Campus, 17 rue des Martyrs, Grenoble Cedex, France, Univ. Grenoble Alpes, MINATEC/INPG, 3 Parvis Louis Néel, Grenoble, France, IMEP-LAHC, MINATEC/INPG, 3 Parvis Louis Néel, Grenoble, France
Abstract
This paper presents a new methodology to characterize the GaN buffer doping level which is a critical parameter for epitaxial fabrication of GaN wafers. As demonstrated in this study, its characterization is challenging due to parasitic effects. Capacitance-Voltage (C-V) measurements are carried out on a Metal Insulator Semiconductor (MIS) structure with a gate on Al2O3 dielectric using a novel configuration. The experimental study is validated with a self-consistent Poisson-Schrodinger (PS) simulation. Finally, our methodology is applied to a new generation of GaN buffer through a fully and partially (without any contacts) processed wafer, with a Hg-probe C-V measurement performed on the partially processed one. © 2017 IEEE.
Author-Keywords
 
Index-Keywords
Capacitance, Gallium nitride, High electron mobility transistors, Metal insulator boundaries, Microelectronics, MIS devices, Semiconductor doping, Silicon wafers, C-V measurement, Capacitance voltage measurements, GaN buffer, GaN buffer layers, Metal insulator semiconductor structures, Parasitic effect, Residual doping, Schrodinger, Wide band gap semiconductors
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