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Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

Publié le 29 mars 2018
Thin-Wall GaN/InAlN Multiple Quantum Well Tubes
Durand C., Carlin J.-F., Bougerol C., Gayral B., Salomon D., Barnes J.-P., Eymery J., Butté R., Grandjean N.
Source-TitleNano Letters
Université Grenoble Alpes, Grenoble, France, Nanophysique et Semiconducteurs Group, CEA, INAC-PHELIQS, 17 Avenue des Martyrs, Grenoble, France, Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland, Nanophysique et Semiconducteurs Group, CNRS, Institut Néel, 25 Avenue des Martyrs, Grenoble, France, European Synchrotron Radiation Facility, 71 Avenue des Martyrs, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France
Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metal-organic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical GaN wires surrounded by a core-shell MQW heterostructure followed by in situ selective etching using controlled H2/NH3 annealing at 1010 °C to remove the inner GaN wire part. After this process, well-defined MQW-based tubes having nonpolar m-plane orientation exhibit UV light near 330 nm up to room temperature, consistent with the emission of GaN/InAlN MQWs. Partially etched tubes reveal a quantum-dotlike signature originating from nanosized GaN residuals present inside the tubes. The possibility to fabricate in a simple way thin-wall III-N tubes composed of an embedded MQW-based active region offering controllable optical emission properties constitutes an important step forward to develop new nitride devices such as emitters, detectors or sensors based on tubelike nanostructures. © 2017 American Chemical Society.
MOVPE, multiple quantum wells, Nanotubes, nitride semiconductors, quantum dots, UV emission
Gallium nitride, Metallorganic vapor phase epitaxy, Modulators, Nanocrystals, Nanotubes, Nitrides, Optical properties, Organometallics, Semiconducting indium compounds, Semiconductor quantum dots, Thin walled structures, Tubes (components), Wide band gap semiconductors, Yarn, Active regions, Metal-organic vapor phase epitaxy, Nitride semiconductors, Nonpolar m-plane, Optical emissions, Selective etching, Thin-wall tube, UV emissions, Semiconductor quantum wells
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