Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM
| Auteurs | Alayan M., Vianello E., De Salvo B., Perniola L., Padovani A., Larcher L. |
| Year | 2017-0265 |
| Source-Title | IEEE Design and Test |
| Affiliations | Advanced Memory Technology Laboratory, CEA-LETI, Grenoble, France, Università di Modena e Reggio Emilia, Italy |
| Abstract | Editor's note: Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors investigate the forming voltage and the data retention of aluminum (Al)-doped HfO2-based RRAM devices and suggest a way to improve the device's data retention time. - - Yiran Chen, Duke University © 2013 IEEE. |
| Author-Keywords | Al-doping, data retention, forming, RRAM |
| Index-Keywords | Forming, Hafnium oxides, Random access storage, RRAM, Al-doping, Data retention, Data retention time, Duke University, Emerging memory, Forming voltages, Retention time, Time duration, Aluminum |
| ISSN | 21682356 |
| Lien vers article | Link |