Guidance to reliability improvement in CBRAM using advanced KMC modelling
| Auteurs | Guy J., Molas G., Cagli C., Bernard M., Roule A., Carabasse C., Toffoli A., Clermidy F., De Salvo B., Perniola L. |
| Year | 2017-0259 |
| Source-Title | IEEE International Reliability Physics Symposium Proceedings |
| Affiliations | CEA, LETI, MINATEC Campus, 17 rue des Martyrs, GRENOBLE Cedex 9, France |
| Abstract | In this paper, we use Kinetic Monte Carlo (KMC) simulations to investigate CBRAM variability. A full consistent model able to simulate SET, RESET, retention and endurance characteristics was proposed for the 1st time, allowing to describe experimental data obtained on Al2O3/CuTex based CBRAM. The role of oxygen vacancy generation during programming is described and its impact on reliability (retention and endurance) is elucidated. The origin of the resistance spread is discussed and linked to the conductive filament shape and operating conditions. The cycle to cycle contribution on resistance variability is uncorrelated from the intrinsic resistance distribution limit. Finally, guidelines are given in order to optimize the memory distribution, reduce tail bits and improve CBRAM reliability. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Monte Carlo methods, Oxygen vacancies, Conductive filaments, Intrinsic resistance, Kinetic monte carlo simulation, On-resistance, Operating condition, Reliability improvement, Vacancy generation, Reliability |
| ISSN | 15417026 |
| Lien vers article | Link |