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New insights on strained SiGe channels pFET NBTI reliability

Publié le 29 mars 2018
New insights on strained SiGe channels pFET NBTI reliability
Ndiaye C., Biavaix A., Aiabi M., Berthelon R., Huard V., Federspield X., Diouf C., Andrieu F., Ortolland S., Rafik M., Cacho F.
Source-TitleIEEE International Reliability Physics Symposium Proceedings
REER/STMicroelectronics, 850 rue Jean Monnet, Crolles, France, ISEN REER-IM2NP UMR CNRS 7334, Pl. G. Pompidou, Toulon, France, CEMES-CNRS, 29 Rue Jeanne Marvig, Toulouse, France, CEA-LETI, Minatec Campus, 17 rue des Martyrs, Grenoble Cedex 4, France
This work provides new results on the effects of the variation of Length of Diffusion (LOD), for active zones, the concentration of Germanium (Ge) and the impact of gate stack variation found on the performance and reliability in p-MOSFET transistors fabricated with a 14nm Ultra-Thin Body and Box (UTBB) FDSOI CMOS technology. Experiments show that changing the gate-To-STI distances on active (SA) or Germanium concentration has an impact on threshold Voltage (Vth), and on NBTI reliability. This study offers new perspectives to understand the impact of SiGe on NBTI degradation and recovery. Furthermore we show that NBTI recovery is not impacted neither by SiGe concentration nor gate stack and we also see that SiGe allows to improve NBTI degradation. © 2017 IEEE.
Gate Stack, Layout, LOD, NBTI, recovery, SiGe, Ultra-Fast measurements
Germanium, Logic gates, MOSFET devices, Negative bias temperature instability, Recovery, Reliability, Silicon alloys, Thermodynamic stability, CMOS technology, Gate stacks, Germanium concentration, Layout, Performance and reliabilities, SiGe, Ultra thin body and boxes, Ultra-fast, Si-Ge alloys
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