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Microscale mapping of SPAD photon detection probability

Publié le 29 mars 2018
Microscale mapping of SPAD photon detection probability
Auteurs
Bonifacio D.A.B., Gros-Daillon E., Verger L.
Year2017-0232
Source-TitleJournal of Instrumentation
Affiliations
CEA LETI MlNATEC Campus, Grenoble, France, Univ. Grenoble Alpes, Grenoble, France, Institute of Radioprotection and Dosimetry, IRD/CNEN, Rio de Janeiro, RJ, Brazil
Abstract
As silicon photomultiplier (SiPM) technology still has potential for further improvements, we describe a method to map the photon detection probability of a single-photon avalanche diode (SPAD) at the microscale level, in order to evaluate the behavior of the SPAD triggering capabilities as a function of the position of the incident light and to determine its homogeneity. For this purpose, we performed the analysis of the light response for a single active SPAD, with all its neighbors switched off, using a scanning setup, composed of the digital SiPM SPADnet-I data acquisition system, a microscope, a servo positioning system, a spectrograph and a CCD camera. We varied the wavelength of the incoming light to probe the device volume from the P-well to the N-well, with the ultimate goal of understanding and improving overall sensor performance. The comparison of this study to SPAD design and electric field technology computer-aided design (TCAD) simulation enables one to estimate how much the P-well drawn area could be increased to optimize fill factor without causing premature edge breakdown through guard ring failure. © 2017 IOP Publishing Ltd and Sissa Medialab srl.
Author-Keywords
Detector design and construction technologies and materials, Gamma camera, SPECT, PET PET/CT, coronary CT angiography (CTA), Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc)
Index-Keywords
Avalanche diodes, CCD cameras, Computer aided design, Computerized tomography, Electric fields, Light, Particle beams, Photodetectors, Semiconductor diodes, Single photon emission computed tomography, Data acquisition system, Gamma cameras, Modelling and simulations, PiN diode, Sensor performance, Servo-positioning systems, Silicon photomultiplier, Single photon avalanche diode, Photons
ISSN17480221
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