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Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers

Publié le 29 mars 2018
Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers
Auteurs
Dieng K., Artillan P., Bermond C., Guiller O., Lacrevaz T., Joblot S., Houzet G., Farcy A., Perrier A.-L., Lamy Y., Flechet B.
Year2017-0194
Source-TitleIEEE Transactions on Components, Packaging and Manufacturing Technology
Affiliations
Université Savoie Mont-Blanc, IMEP-LAHC, Le Bourget du Lac, France, STMicroelectronics, Crolles, France, Université Grenoble Alpes, Grenoble, France, CEA, LETI, Grenoble, France
Abstract
The feasibility of cointegration of new capacitors, named 'through silicon capacitors' (TSCs) with 'through silicon vias' in silicon interposers has recently been demonstrated. Two architectures of TSC are extensively investigated in this paper: 'axial TSC' whose electrodes are connected on either sides of the silicon interposer and 'radial TSC' with electrodes both connected to the metal layers of the back end of line. A general modeling method based on distributed cell segmentation is proposed for both architectures. Validation is performed by measurements from 1 kHz to 40 GHz (above the resonance frequency of the components). A comparative study between radial and axial architectures is performed, leading to the prediction of the performances of those new components. Finally, design rules are established for future integration for power delivery networks decoupling applications. © 2011-2012 IEEE.
Author-Keywords
High frequency modeling, integrated capacitor, measurements, power distribution network (PDN), silicon interposer
Index-Keywords
Architecture, Architecture, Electric power transmission, Electric power transmission, Electrodes, Electrodes, Electronics packaging, Electronics packaging, Network architecture, Network architecture, Three dimensional integrated circuits, Three dimensional integrated circuits, Back end of lines, Back end of lines, Comparative studies, Comparative studies, Frequency performance, Frequency performance, Power delivery network, Power delivery network, Resonance frequencies, Resonance frequencies, Silicon interposers, Silicon interposers, Silicon-capacitor, Silicon-capacitor, Through silicon vias, Through silicon vias, Silicon, Silicon
ISSN21563950
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