Series resistance in different operation regime of junctionless transistors
| Auteurs | Jeon D.-Y., Park S.J., Mouis M., Barraud S., Kim G.-T., Ghibaudo G. |
| Year | 2018-0055 |
| Source-Title | Solid-State Electronics |
| Affiliations | Institute of Advanced Composite MaterialsKorea Institute of Science and Technology, Joellabuk-do, South Korea, School of Electrical EngineeringKorea University, Seoul, South Korea, IMEP-LAHC, Grenoble INP, Minatec, BP 257, Grenoble, France, CEA-LETI Minatec, 17 rue des Martyrs, Grenoble, France |
| Abstract | Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel. © 2018 Elsevier Ltd |
| Author-Keywords | Accumulation channel, Bulk channel, Junctionless transistors (JLTs), Numerical simulation and temperature dependence, Series resistance (Rsd) |
| Index-Keywords | Electric resistance, Numerical models, Temperature distribution, Accumulation channels, Bulk channel, Junctionless transistors, Series resistances, Temperature dependence, Transistors |
| ISSN | 381101 |
| Lien vers article | Link |