Vous êtes ici : Accueil > Dielectrics stability for intermediate BEOL in 3D sequential integration

Publications

Dielectrics stability for intermediate BEOL in 3D sequential integration

Publié le 29 mars 2018
Dielectrics stability for intermediate BEOL in 3D sequential integration
Auteurs
Deprat F., Fenouillet-Beranger C., Jousseaume V., Guerin C., Beugin V., Rochat N., Licitra C., Caubet-Hilloutou V., Benoit D., Imbert G., Rambal N., Batude P., Vinet M.
Year2017-0102
Source-TitleMicroelectronic Engineering
Affiliations
Univ. Grenoble Alpes, Grenoble, France, CEA LETI, Minatec Campus, Grenoble, France, ST Microelectronics, 850 rue Jean Monnet, Crolles, France
Abstract
3D sequential integration, such as CoolCube™, allows to stack vertically layer of devices. Levels of interconnection, also called intermediate Back-End-Of-Line, are needed between successive layers of transistors to avoid routing congestion. Thus, thermal stability of the dielectrics must be studied in order to fulfil the CoolCube™ requirement: at least to be stable up to 500 °C during 2 h. Consequently, the stability of several barrier layers and oxide based materials has been studied through optical characterizations (ellipsometry, Fourier Transform InfraRed spectroscopy and ellipsometric–porosimetry). SiCO (k = 4.5), in replacement of standard SiCNH (k = 5.6) material as barrier layer seems very promising. Regarding the inter-layer dielectric stability, the state-of-the-art porous SiOCH (k = 2.5) stays suitable for a thermal budget of 500 °C, 2 h. © 2016
Author-Keywords
3D integration, Dielectrics, Outgassing, Thermal stability
Index-Keywords
Budget control, Characterization, Degassing, Dielectric materials, Ellipsometry, Fourier transform infrared spectroscopy, Integration, Thermodynamic stability, 3-D integration, Back end of lines, Barrier layers, Inter-layer dielectrics, Optical characterization, Routing congestion, State of the art, Thermal budget, Stability
ISSN1679317
Lien vers articleLink

Retour à la liste