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Crack-free silicon-nitride-on-insulator nonlinear circuits for continuum generation in the c-band

Publié le 1 octobre 2018
Crack-free silicon-nitride-on-insulator nonlinear circuits for continuum generation in the c-band
Auteurs
El Dirani H., Casale M., Kerdiles S., Socquet-Clerc C., Letartre X., Monat C., Sciancalepore C.
Year2018-0045
Source-TitleIEEE Photonics Technology Letters
Affiliations
Optics and Photonics Division, CEA-LETI, Minatec, Grenoble, France, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, UMR CNRS 5270, Ecully, France
Abstract
We report on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits for complementary metal-oxide-semiconductor (CMOS) compatible monolithic co-integration with silicon-based optoelectronics. In particular, a process has been developed to fabricate low-loss crack-free Si3N4 730-nm-Thick films for Kerr-based nonlinear functions featuring full process compatibility with existing silicon photonics and front-end Si optoelectronics. Experimental evidence shows that 2.1-cm-long nanowires based on such crack-free silicon nitride films are capable of generating a frequency continuum spanning 1515-1575 nm via self-phase modulation. This work paves the way to time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines. © 1989-2012 IEEE.
Author-Keywords
Complementary metal-oxide-semiconductor (CMOS), Frequency continuum, Nonlinear optics, Photonic integrated circuits (pics), Silicon-nitride-on-insulator (sinoi)
Index-Keywords
CMOS integrated circuits, Cracks, Dielectric devices, Integration testing, Metal testing, Metallic compounds, Metals, MOS devices, Nitrides, Nitrogen compounds, Nonlinear optics, Optical waveguides, Oxide semiconductors, Photonic devices, Photonics, Semiconducting silicon, Silicon compounds, Silicon nitride, Timing circuits, Transistors, Complementary metal oxide semiconductors, Continuum generations, Experimental evidence, Frequency continuums, Photonic integrated circuits, Process compatibility, Silicon based optoelectronics, Silicon Nitride Film, Photonic integration technology
ISSN10411135
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