Growth of Ge1?xSnx Nanowires by Chemical Vapor Deposition via Vapor–Liquid–Solid Mechanism Using GeH4 and SnCl4
| Auteurs | Haffner T., Zeghouane M., Bassani F., Gentile P., Gassenq A., Chouchane F., Pauc N., Martinez E., Robin E., David S., Baron T., Salem B. |
| Year | 2018-0026 |
| Source-Title | Physica Status Solidi (A) Applications and Materials Science |
| Affiliations | Univ. Grenoble Alpes CNRS, LTM, Grenoble, France, Univ. Grenoble Alpes CEA, INAC-Pheliqs, Grenoble, France, Univ. Grenoble Alpes CEA, LETI-DTSI, Grenoble, France, Dr. E. Robin, Univ. Grenoble Alpes CEA, INAC-MEM, Grenoble, France |
| Abstract | In this work we report on the elaboration and characterization of Ge1?xSnx nanowires synthetized by chemical vapor deposition (CVD) via vapor–liquid–solid (VLS) mechanism using GeH4 and SnCl4 as precursors. We have investigated tin incorporation in Ge as a function of experimental growth conditions such as growth temperature and Sn precursor partial pressure (PSnCl4/PGeH4 ratio). We have demonstrated Ge1?xSnx nanowires with Sn incorporation around 1 at.% in the core with a thin Sn-rich shell with up to 10 at.% Sn well beyond the equilibrium solubility of Sn in bulk Ge. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Author-Keywords | chemical vapor deposition, GeSn nanowires, group IV semiconductors, structural characterization, vapor–liquid–solid (VLS) mechanism |
| Index-Keywords | Chlorine compounds, Deposition, Germanium, Germanium compounds, Liquids, Nanowires, Tin, Tin compounds, Vapor deposition, Chemical vapor depositions (CVD), Equilibrium solubilities, Group-IV semiconductors, Growth conditions, Precursor partial pressure, Structural characterization, Tin incorporation, Vapor-liquid-solid mechanism, Chemical vapor deposition |
| ISSN | 18626300 |
| Lien vers article | Link |