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Impact of low thermal processes on reliability of high-k/metal gate stacks

Publié le 29 mars 2018
Impact of low thermal processes on reliability of high-k/metal gate stacks
Auteurs
Tsiara A., Garros X., Lu C.-M.V., Fenouillet-Béranger C., Ghibaudo G.
Year2017-0068
Source-TitleJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Affiliations
CEA, Leti, MINATEC Campus, 17 rue des Martyrs, Cedex Grenoble, France, IMEP-LAHC, 3 Parvis Louis Néel, CS 50257, Cedex 1 Grenoble, France
Abstract
The time dependent defect spectroscopy method has been used to analyze the impact of low thermal budget (TB) processes on the quality of high-k/metal gate stacks. For n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), it is shown that reducing the TB of the process does not seem to degrade the t0-reliability of the gate oxide. The density of pre-existing high-k defects responsible for random telegraph noise (RTN) has a small increase for the low temperature (LT) process, and, at the same time, the location of the traps, inside the oxide, remains the same. On the other hand, for p-type MOSFETs, the gate stack reliability is affected by the thermal budget, and there is a large increase in the density of RTN defects for the LT process compared to the high temperature reference. Finally, it is observed that, for low thermal budget, the nature of the traps changes and there is a modification of the depth of the traps within the interfacial layer which are, now, closer to the Si interface. This study gives guidelines to achieve good trade off performance/reliability for a 3D CoolCube™ integration process. © 2017 American Vacuum Society.
Author-Keywords
 
Index-Keywords
Budget control, Defects, Economic and social effects, Field effect transistors, Logic gates, Metals, MOS devices, Oxide semiconductors, Reliability, Spectroscopic analysis, Temperature, Defect spectroscopy, High temperature, High-k/metal gates, Integration process, Interfacial layer, Low temperatures, Low thermal budget, Random telegraph noise, MOSFET devices
ISSN21662746
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