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Power decreasing strategies for Phase Change Memories

Publié le 7 décembre 2023
Power decreasing strategies for Phase Change Memories
Domaine scientifiquePhysique
SpécialitéPhysique des matériaux
SEM,TEM, XRR, 4PP, AFM, Voltage/current characterization
Compétences Informatiques
-Mathcad and(or) Matlab
Mots clésNanocharacterization
Durée du stage6 months
LocalisationRégion Rhône-Alpes (38)
Niveau d'étudeBac + 4/5
Thèse possible1
Date de diffusion 
Description du stage
"Collaboration framework and context :CEA-LETI (DCOS department) is developing the next generations of Embedded Non Volatile Memories, and in particular the Phase Change Memories that demonstrate many advantages for these applications. One of the main factor to consider is the minimization of the power consumption of the memory cell, this requiring an optimization of the storage element in order to decrease the programming current. In this context, the objective of the internship is twofold: improve on the one hand the thermal confinement of the active volume, and on the other hand the electrical confinement of the current within the heating electrode. . Work description :The work will be start with a bibliographic study, to establish the state of the art of confined PCM cells focusing on the thermal aspects. Then, in order to identify the good candidate materials for thermal barriers fabrication and integration in PCM devices, several thin films will be benchmarked in terms of electrical and thermal conductivities, as well as conformity of the deposited films. In parallel, the student will contribute to the development of an MOCVD TiN thin films of reduced thickness, to be further integrated as the bottom electrode of the PCM device. The thin film will be fully characterized (SEM,TEM, XRR, Four Point Probe, AFM) focusing on the evaluation of its conformity, thickness and continuity. Finally, the student will perform electrical characterizations on the optimized devices integrating both the identified thermal barriers and the thin TiN electrode. Particular attention will be given to the reduction of the programming current resulting from the modification of the memory cell. The interpretation of the experimental results, and in particular the correlation between electrical I-V and material characterization, will result in a better understanding of the thermal issues in a finalized device, allowing to propose areas for optimization. "
Email tuteurguillaume.bourgeois@cea.fr

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