Thursday, 29 October 2026
08:20 am - 08:50 am
Room 236
(Level 2, BMO Centre)
J. Kanyandekwe,
B. Mohamad,
V. Lapras,
F. Bringuier,
Z. Chalupa,
T. Mota Frutuoso,
K. Romanjek,
J. Lacord,
T. Marion,
L. Saidi,
L. Laraignou,
P. Hauchecorne,
J. Lespiaux,
N. Gauthier,
T. Cabaret,
M. Dartois,
A. Raison,
M. Jourdan,
V. Loup,
A. Bond,
J. Richy,
A. Thouvard,
L. Couture,
A. Blot-Saby,
O. Glorieux,
A. Lassenberger,
N. Bernier,
G. Persson,
D. Cooper,
M. Dryhailo,
A. Grenier,
T. Dewolf,
T. Muller,
A. Andre,
J. Marchand,
T. Monniez,
S. Jarjayes,
A. S. Royet,
R. Chouk,
O. Cueto,
M. C. Cyrille,
C. Fenouillet-Beranger,
J. M. Hartmann
Selective Epitaxial Growth of Very Highly Doped Sip Raised Sources and Drains Yielding Low Ron and Significant idsat Gains in 10 Nm Fd-SOI nMOS Transistors