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Sébastien DUBOIS


Published on 16 April 2024

Sébastien DUBOIS

Dr. hab. , CEA Fellow​

Dr. Sébastien Dubois studied materials sciences at the National Institute for Applied Sciences (INSA) in Lyon and graduated with an engineering degree in 2004. In 2007 he received his Ph.D. in Physics from Marseille University.

After joining CEA-Liten in 2007, he conducted and supervised researches in the field of defect engineering, advanced characterizations, and homojunction solar cells.

He is currently responsible for the Alternative Cells Laboratory of CEA, with activities on silicon materials, high-temperature passivated contacts, heterojunction cells and tandem devices. 

He is the member of the Scientific Committees of several international conferences and teaches the basics of silicon photovoltaics at the University of Nantes (France). ​





  • ​​10 staff​
  • 1 postdoc
  • 3 PhD students​​​​

Research Activities​​

The lab activity focuses first on the crystallization of monocrystalline silicon ingots and defect engineering strategies.

In addition, a large part of our researches concerns high efficiency silicon-based solar cells with advanced passivated contacts (TOPCon, heterojunction) for single-junction and tandem devices.

A particular attention is paid to the development of sustainable architectures and processes, minimizing for instance the use of critical materials.

Our developments address both terrestrial and space applications. ​

Open positions:

Technicien pour la fabrication de cellules solaires photovoltaïques silicium H/F

Selected publications and conferences:  

  • Investigation of p-Type Silicon Heterojunction Radiation Hardness, IEEE Journal of Photovoltaics, 2023, DOI: 10.1109/JPHOTOV.2023.3333197
  • Passivating Silicon Tunnel Diode for Perovskite on Silicon nip Tandem Solar Cells, Energies, 2023, DOI: 10.3390/en16114346
  • Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si (B)/SiOx passivating contacts for high-efficiency c-Si solar cells, Solar Energy Materials and Solar Cells, 2021, DOI: 10.1016/j.solmat.2020.110899
  • Analysis of Lifetime-Limiting Defects in Cast-Mono Silicon Using Injection-Dependent Lifetime Spectroscopy Methods, IEEE Journal of Photovoltaics, 2021, DOI: 10.1109/JPHOTOV.2021.3074060
  • Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells, Solar Energy Materials and Solar Cells, 2019, DOI: 10.1016/j.solmat.2019.109912 

Selected patents: 

  • 2019 | Method for locating a wafer in the ingot of same, US Patent 10,371,657
  • 2014 | Method for manufacturing an n-type monocrystalline silicon ingot, WO2016075092A1
  • 2013 | Method for mapping oxygen concentration, US Patent 8,571,812