IEEE International Electron Devices Meeting (IEDM) is the world's preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.
IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.
CEA-Leti to present latest results & insights on 3D, Memories, RFSOI Technologies & Quantum Computing at IEDM 2021
CEA-Leti will unveil its latest scientific results, including on 3D for imagers, FeRAM memories, RFSOI technologies and silicon-based quantum computing at IEDM 2021, Dec. 11-15.
- The event will be held virtually and in-person. Find below CEA-Leti's main publications at IEDM 2021:
3D sequential integration: applications and associated Key Enabling Modules (design & technology)
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Monday, Dec. 13 @ 2:00 p.m.
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Material and integration challenges to enable large scale Si quantum computing
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Tuesday, Dec. 14 @ 9:30 a.m.
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Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation
| Tuesday, Dec. 14 @ 9:30 a.m.
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Modeling and Simulation - Advanced simulation and modeling of FETs
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Tuesday, Dec. 14 @ 2:15 p.m.
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Advanced Logic Technology - Front- and back-side advanced interconnects
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Tuesday, Dec. 14 @ 2:15 p.m.
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Reliability of Systems and Devices - Advanced Logic Device Reliability
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Wednesday, Dec. 15 @ 9:00 a.m.
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Heater system optimization for robust ePCM reliability and scalability in 28nm FDSOI technology
| Wednesday, Dec. 15 @ 9:05 a.m.
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Silicon Photonics Beyond Optical Interconnects
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Wednesday, Dec. 15 @ 9:30 a.m.
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Magnetic domain walls: from physics to devices
| Wednesday, Dec. 15 @ 9:55 a.m.
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Memory Technology - Ferroelectric Memory
| Wednesday, Dec. 15 @ 1:30 p.m.
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16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility | Wednesday, Dec. 15 @ 1:35 p.m.
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From reliability to security of devices
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Wednesday, Dec. 15 @ 1:35 p.m.
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65nm RFSOI Power Amplifier Transistor Ageing at mmW frequencies, 14 GHz and 28 GHz
| Wednesday, Dec. 15 @ 2:25 p.m.
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Thorough Investigation of Low Frequency Noise Mechanisms in AlGaN/GaN and Al2O3/GaN HEMTs
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Wednesday, Dec. 15 @ 2:50 p.m.
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A new FDSOI spin qubit platform with 40nm effective control pitch
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Wednesday, Dec. 15 @ 2:50 p.m. |
