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PsD-DRT-12-0030

Published on 7 December 2023
PsD-DRT-12-0030
Research FieldElectronics and microelectronics - Optoelectronics

Domaine-S

ThemeEngineering sciences

Theme-S

Domaine
Electronics and microelectronics - Optoelectronics Engineering sciences DRT DCOS SITEC LAPS Grenoble
Title
Study of the thermo-mechanical strains in the HEMT AlGaN/GaN on silicon
Abstract
Fabricating the HEMT AlGaN/GaN device is complex and leads to the formation of crystalline defects. These strains, in the GaN layer, leads to crackings in the GaN layer or leads to a delamination at the top interface. Moreover, these mechanical strains conjugated to thermal strains during device working, can lead to a degradation of the electrical performance of the device. This heterogeneous assembly, involve a complex behaviour. The various materials used, react differently to the thermal-mechanical strains. The requested work is to study and to model the distortion of this structure, in order to evaluate the strains effects on the electrical performance on lateral and vertical devices.
Location
Département Composants Silicium (LETI) Service Intégrations et Technologies pour les conversions d'énergies Laboratoire des composants de Puissance à Semiconducteur
Pcontact
BUJ Christel CEA DRT/DCOS/SCME/LC2E CEA-DRT-LETI Minatec Campus DCOS/SCME/LC2E 17 rue des Martyrs 38054 GRENOBLE CEDEX9 0438780860
Start date1/9/2012
Contact personchristel.buj@cea.fr

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