Influence of the crystal orientation on the operation of junctionless nanowire transistors
| Description | |
| Date | |
| Authors | Trevisoli R., Doria R.T., De Souza M., Pavanello M.A., Barraud S., Vinet M. |
| Year | 2017-0090 |
| Source-Title | 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016 |
| Affiliations | Electrical Engineering Department, Centro Universitário FEI, Sao Bernardo do Campo, Brazil, CEA, LETI, Minatec Campus, University Grenoble Alpes, Grenoble, France |
| Abstract | This work presents, for the first time, an analysis of the influence of the crystal orientation on the electrical performance of Junctionless Nanowire Transistors. Experimental results demonstrate that the device rotation from the standard <110> to the <100> direction over a (100) SOI wafer can significantly degrade the performance of the transistors. © 2016 IEEE. |
| Author-Keywords | ION/IOFF ratio, Junctionless Nanowires Transistors, Orientation, Transconductance |
| Index-Keywords | Microelectronics, Nanowires, Silicon wafers, Transconductance, Transistors, Electrical performance, Nanowire transistors, Nanowires transistors, SOI wafers, Crystal orientation |
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| Link | Link |