Towards fully integrated 28nm UTBB FD-SOI IoT node: The sub-50?W RF receiver
| Description | |
| Date | |
| Authors | Martineau B., Jany C., Todeschini F., Morche D., Mercier E. |
| Year | 2017-0088 |
| Source-Title | 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016 |
| Affiliations | CEA-LETI, 17, rue des Martyrs, Grenoble, France, STMicroelectronics, 850 Rue Jean Monnet, Crolles, France, Université de Grenoble-Alpes, Grenoble, France |
| Abstract | This paper reports the design of a Wake up Receiver taking advantage of the 28nm UTBB FD-SOI. This design is motivated by the integration of the IOT node containing processing, connectivity and sensing in a unique System on Chip. © 2016 IEEE. |
| Author-Keywords | 28nm UTBB FD-SOI, IoT, Ultra Low Power, wake up receiver |
| Index-Keywords | Finite difference method, Integrated circuit design, Microelectronics, System-on-chip, Wakes, 28nm UTBB FD-SOI, Fully integrated, RF receivers, Ultra low power, Wake-up receiver, Internet of things |
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| Link | Link |