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Fundamental variability limits of filament-based RRAM

Published on 29 March 2018
Fundamental variability limits of filament-based RRAM
Description
 
Date 
Authors
Grossi A., Nowak E., Zambelli C., Pellissier C., Bernasconi S., Cibrario G., Hajjam K.E., Crochemore R., Nodin J.F., Olivo P., Perniola L.
Year2017-0123
Source-TitleTechnical Digest - International Electron Devices Meeting, IEDM
Affiliations
1CEA-LETI, Minatec Campus, Grenoble, France, ENDIF, Univ. of Ferrara, Ferrara, Italy
Abstract
While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are presented allowing the quantification of the intrinsic variability factors. As a result, the fundamental variability limits of filament-based RRAM in the full resistance range are identified. © 2016 IEEE.
Author-Keywords
 
Index-Keywords
Electron devices, Cycling operations, Intrinsic variabilities, NAND Flash, Resistive rams (RRAM), RRAM
ISSN1631918
LinkLink

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