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Capping stability of Mg-implanted GaN layers grown on silicon

Published on 29 March 2018
Capping stability of Mg-implanted GaN layers grown on silicon
Lardeau-Falcy A., Coig M., Charles M., Licitra C., Baines Y., Eymery J., Mazen F.
Source-TitlePhysica Status Solidi (A) Applications and Materials Science
Université Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, Grenoble Alpes University, CEA INAC-MEM-NRS, Grenoble Cedex 9, France
The morphological stability during activation annealing of Mg-implanted GaN layers (2 ?m thick) grown on Si (111) is studied for several protective layers and fluencies in the 1013–1015 at. cm?2 range. We show that a thin capping, composed of a few nanometer thick AlN and SiNx stacks grown in situ just after GaN deposition, provides a good solution to retain flat morphology and no strain cracking up to 1 h annealing at 1100 °C in N2. These results are compared to thicker protective stackings with AlN layers of Si3N4 or SiO2 deposited after the implantation that withstand a thermal budget of up to 1 h at 1200 °C in N2. The efficiency of these different cap layers to limit GaN damage during high-temperature annealing is studied as well as the impact of Mg implantation process on the cap resilience. The quality of the GaN sublayer is studied by low-temperature photoluminescence to analyze structural/optical defects and Mg related complexes. X-ray diffraction is performed to evaluate residual strains at the different process stages. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
cap layer, GaN, ion implantation, p-doping
Annealing, Budget control, Ion implantation, Silicon nitride, Silicon oxides, Strain, Temperature, X ray diffraction, Activation annealing, Cap layers, High-temperature annealing, Implantation process, Low temperature photoluminescence, Morphological stability, P-doping, Protective layers, Gallium nitride

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