School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United States, Georgia Tech-CNRS, UMI 2958, Metz, France, CEA-LETI, Minatec Campus, Grenoble, France, LMOPS, University of Lorraine, EA4423, Metz, France

We report on the optimization of p-GaN layers for high indium (In) content InGaN applications by optimizing temperature, precursor CP2Mg flow rate and III/V ratio and report also on the optimization of p-contact performance. Using MOVPE, a 150 nm thick p-type GaN with moderate Mg doping and a 50 nm contact layer with high Mg doping concentration were grown on standard GaN templates at growth temperatures in the range of 850–1000 °C. Hall measurement yields hole concentration of 4.8 × 1017 cm?3 for the optimized sample. SIMS shows Mg concentration of 1.7 × 1020 cm?3 on average in the heavily doped and 4 × 1019 cm?3 on average in the moderately doped p-GaN layer for the optimized p-GaN. A multilayer Pd/Ag/Ni/Au metal contact has been deposited on this p-GaN and studied using the CTLM technique. Optimization of both p-GaN layers and p-contact processing led to a low resistance contact with specific contact resistivity of 6 × 10?4 ? cm2. We believe, the very high Mg concentration of the surface layer in intimate contact with the contact metal reduces the Schottky barrier height and band bending. This optimization of p-GaN is an important step towards high efficiency green LEDs and solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

GaN, InGaN, light-emitting diodes, MOVPE, ohmic contacts, solar cells

Hole concentration, Indium, Light emitting diodes, Metallorganic vapor phase epitaxy, Ohmic contacts, Palladium, Schottky barrier diodes, Solar cells, Contact layers, Hall measurements, High-efficiency, InGaN, Low-resistance contacts, Mg concentrations, Schottky barrier heights, Specific contact resistivity, Gallium nitride