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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Published on 29 March 2018
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
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Date 
Authors
Baines Y., Buckley J., Biscarrat J., Garnier G., Charles M., Vandendaele W., Gillot C., Plissonnier M.
Year2017-0496
Source-TitleScientific Reports
Affiliations
Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France
Abstract
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher. © 2017 The Author(s).
Author-Keywords
 
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ISSN20452322
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