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Temperature and Injection Dependence of Photoluminescence Decay in Midwave Infrared HgCdTe

Published on 29 March 2018
Temperature and Injection Dependence of Photoluminescence Decay in Midwave Infrared HgCdTe
Description
 
Date 
Authors
Delacourt B., Ballet P., Boulard F., Ferron A., Bonnefond L., Pellerin T., Kerlain A., Destefanis V., Rothman J.
Year2017-0493
Source-TitleJournal of Electronic Materials
Affiliations
CEA, LETI, MINATEC Campus, Univ. Grenoble Alpes, Grenoble, France, SOFRADIR – Development and Production Center, Actipole – 364 Route de Valence, CS – 10021, Veurey-Voroize, France
Abstract
Photoluminescence decay (PLD) measurements have been performed on mid-wave infrared (MWIR) Hg-vacancy p-doped HgCdTe samples at temperatures ranging from 85 K to 330 K. The doping level is p0=6×1015cm-3 at 80 K and the cut-off wavelength is ?c=4.2?m at 300 K. The PLD signal has been fitted with a photo-injection level dependent model in order to estimate the contributions from the different recombination mechanisms to the total minority carrier lifetime. Shockley–Read–Hall centers lying in the bandgap at 25 meV from the conduction or the valence band has been found to limit the minority carrier lifetime from 85 to at least 200 K. The value of the Auger 1 lifetime coefficient is extracted from the first instants of signal decay for each temperature and reaches Geeini-3=5×10-26cm6s-1 at 85 K. The temperature evolution of the different contributions to the lifetime are in accordance with dark current density measurements in HgCdTe photodiodes. © 2017, The Minerals, Metals & Materials Society.
Author-Keywords
HgCdTe, lifetime, mercury vacancies, MWIR, photo-injection, photon recycling, PLD
Index-Keywords
Infrared radiation, Photoluminescence, Pulsed laser deposition, Vacancies, HgCdTe, lifetime, Mercury vacancies, MWIR, Photon recycling, Carrier lifetime
ISSN3615235
LinkLink

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