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Low-temperature and scalable CVD route to WS2 monolayers on SiO2/Si substrates

Published on 29 March 2018
Low-temperature and scalable CVD route to WS2 monolayers on SiO2/Si substrates
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Date 
Authors
Cadot S., Renault O., Rouchon D., Mariolle D., Nolot E., Thieuleux C., Veyre L., Okuno H., Martin F., Quadrelli E.A.
Year2017-0480
Source-TitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Affiliations
Université Grenoble Alpes, FR-38000 Grenoble, CEA LETI, Minatec Campus, Grenoble Cedex 9, France, Université de Lyon, Laboratoire C2P2, UMR 5265, CNRS, Université Claude Bernard Lyon 1 - CPE Lyon, École Supérieure de Chimie, Physique et Électronique de Lyon, 43 Boulevard du 11 Novembre 1918, Villeurbanne Cedex, France
Abstract
Tungsten disulfide (WS2) monolayers are promising for next-generation flat electronics, but few scalable deposition methods are currently available. Here, the authors report the fabrication of tungsten disulfide monolayers through a novel two-step chemical vapor deposition process involving the deposition of an amorphous tungsten sulfide layer at a relatively mild temperature from the W(CO)6 and 1,2-ethanedithiol precursors, followed by a short annealing at 800 °C under an inert atmosphere. This two-step process allows the fabrication of a crystalline WS2 deposit with a low thermal budget. Raman, x-ray photoelectron, and wavelength dispersive x-ray fluorescence spectroscopic studies performed before and after annealing confirmed the deposition of a sulfur-rich amorphous intermediate, and further confirmed its conversion upon annealing toward oriented 2D WS2 crystals in the 1-2 monolayer range, as corroborated by high-resolution transmission electron microscopy. © 2017 American Vacuum Society.
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ISSN7342101
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